Dr. HAUENSTEIN'S HOME PAGE

Associate Professor of Physics
Department of Physics
Oklahoma State University
Stillwater, OK 74078-3072

Tel: (405) 744-5812
Fax: (405) 744-6811

Course Info

Research Specialization

Lab Tour

• MBE Growth Lab
• Epitaxial Materials Characterization Lab

Graduate Students

• Mark O'Steen (Ph.D. student)
• Fritz Fedler (M.S. student)

Selected Recent Publications

Book Chapters:

• ``MBE Growth of Wide-Gap Refractory Nitride Epitaxial Films,'' R. J. Hauenstein, in Thin Films:  Heteroepitaxial Systems, ed. by W. K. Liu and M. B. Santos (World Scientific Press, Singapore, 1999), Chap. 11.

Journal Articles:

• ``Reflection High Energy Electron Diffraction Study of Nitrogen Plasma Interactions with a GaAs (100) Surface,'' R. J. Hauenstein, D. A. Collins, X. P. Cai, M. L. O'Steen, and T. C. McGill, Appl. Phys. Lett. 66, 2861 (1995).

• ``Anion Exchange Reactions and Initial GaN Epitaxial Layer Formation under Nitrogen Plasma Exposure of a GaAs Surface,'' R. J. Hauenstein, D. A. Collins M. L. O'Steen, Z. Z. Bandic, S. J. Hwang, and T. C. McGill, Mater. Res. Soc. Symp. Proc. 388, 259 (1995).

• ``Kinetic Modeling of Microscopic Processes during Electron Cyclotron Resonance Microwave Plasma-Assisted Molecular Beam Epitaxial Growth of GaN/GaAs Heterostructures,'' Z. Z. Bandic, R. J. Hauenstein, M. L. O'Steen, and T. C. McGill, Appl. Phys. Lett. 68, 1510 (1996).

• ``Strain Effects on Excitonic Transitions in GaN: Deformation Potentials,'' W. Shan, R. J. Hauenstein, A. J. Fischer, J. J. Song, W. G. Perry, M. D. Bremser, R. F. Davis, and B. Goldenberg, Phys. Rev. B 15, 13460 (1996).

• ``Atomic-Scale Structure and Electronic Properties of GaN/GaAs Superlattices'', R. S. Goldman, B. G. Briner, R. M. Feenstra, M. L. O'Steen, and R. J. Hauenstein, Appl. Phys. Lett. 69, 3698 (1996).

• ``Microscopic Processes during Electron Cyclotron Resonance Microwave Nitrogen Plasma-Assisted Molecular Beam Epitaxial Growth of GaN-GaAs Heterostructures: Experiments and Kinetic Modeling,'' Z. Z. Bandic, R. J. Hauenstein, M. L. O'Steen, and T. C. McGill, J. Vac. Sci. Technol. 14, 2948 (1996).

• ``MBE Growth and Characterization of InSb/Al_xIn_1-xSb Strained Layer Structures,'' K. J. Goldammer, W. K. Liu, W. Ma, M. B. Santos, R. J. Hauenstein, and M. L. O'Steen, Mater. Res. Soc. Symp. Proc. 450, 97 (1996).

• ``LPE Growth of Crack-Free PbSe Layers on Si (100) using MBE-Grown PbSe/BaF₂/CaF₂ Buffer Layers,'' B. N. Strecker, P. J. McCann, X. M. Fang, R. J. Hauenstein, M. L. O'Steen, and M. B. Johnson, J. Electron. Mater. 26, 444 (1997).

• ``Nanometer-Scale Studies of Nitride/Arsenide Heterostructures Produced by Nitrogen Plasma Exposure of GaAs,''  R. S. Goldman, B. G. Briner, R. M. Feenstra, M. L. O'Steen, and R. J. Hauenstein, J. Electron. Mater. 26, 1342 (1997).

• ``Intrinsic Exciton Transitions in GaN,'' W. Shan, A. J. Fischer, S. J. Hwang, B. D. Little, R. J. Hauenstein, X. C. Xie, J. J. Song, D. S. Kim, B. Goldenberg, R. Horning, S. Krishnankutty, W. G. Perry, M. D. Bremser, and R. F. Davis, J. Appl. Phys. 83, 455 (1998).

• ``High Resolution X-Ray Analysis of Pseudomorphic InGaN/GaN Multiple Quantum Wells: Influence of Si Doping Concentration,'' Y.-H. Cho, F. Fedler, R. J. Hauenstein, G. H. Park, J. J. Song, S. Keller, U. K .Mishra, and S. P. DenBaars, Appl. Phys. Lett. 85, 3006 (1999).

• ``Effect of Substrate Temperature and V/III Flux Ratio on In Incorporation for InGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy,'' M. L. O'Steen, F. Fedler, and R. J. Hauenstein, Appl. Phys. Lett. 75, 2280 (1999).

• ``A Study of the Effect of V/III Flux Ratio and Substrate Temperature on the In Incorporation Efficiency in In_xGa_1-xGaN/GaN Heterostructures Grown by RF Plasma-Assisted Molecular Beam Epitaxy,'' M. L. O'Steen, F. Fedler, and R. J. Hauenstein, MRS Internet J. Nitride Semicond. Res. 5S1, W3.27 (2000).